2N4001 GP BJT
Datasheet: View
Stock
- 60 NEW JERSEY SEMICONDUCTOR
- 3 SILICON TRANSISTOR CORP
- 37 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 0.5@0.1mA@0.5mA | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Power Dissipation | 1000 | mW |
| Type | NPN |