2N4003 GP BJT
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- 158 NEW JERSEY SEMICONDUCTOR
- 54 SILICON TRANSISTOR CORP
Trans GP BJT NPN 100V 30A 3-Pin TO-63
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.2@4mA@15mA | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Power Dissipation | 100000 | mW |
| Type | NPN |