2N4029 GP BJT

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  • 51 MOTOROLA
  • 221 NEW JERSEY SEMICONDUCTOR
  • 2173 SOLID STATE TRANSISTOR
  • 57 ST MICRO
  • 1 TELEDYNE SEMI
  • 1474 TEXAS INSTRUMENT
  • 7 TRANSITRON
  • 4 WORLD WIDE

Trans GP BJT PNP 80V 1A 3-Pin TO-18

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.15@15mA@150mA 0.5@50mA@500mA
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 500 mW
Type PNP