2N4033 GP BJT
Datasheet: View
Stock
- 3 CONTINENTAL DEVICES
- 386 FAIRCHILD
- 86 INTERMETALL
- 1 MICROSEMI CONDUCTOR
- 129 MOTOROLA
- 112 NATIONAL SEMICONDUCTOR
- 17368 NEW JERSEY SEMICONDUCTOR
- 15 PHILIPS
- 62 SGS
- 40 SIEMENS
- 15 TELEDYNE SEMI
- 16 TOMSON
- 4 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.15@15mA@150mA|0.5@50mA@500mA|1@100mA@1A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 800 | mW |
| Type | PNP |