2N4150 GP BJT
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Stock
- 27 ADVANCED SEMI
- 378 NEW JERSEY SEMICONDUCTOR
- 16 SILICON TRANSISTOR CORP
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@0.5A@5A|2.5@1A@10A | V |
| Maximum Collector Emitter Voltage | 70 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | NPN |