2N4232 GP BJT

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  • 8 FAIRCHILD
  • 1 MOTOROLA
  • 726 NEW JERSEY SEMICONDUCTOR
  • 5 SOLID SATE
  • 3 SOLID STATE TRANSISTOR

Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) TO-66 Sleeve

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 70 V
Maximum Collector Emitter Saturation Voltage 2@3A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 3 A
Maximum Power Dissipation 35000 mW
Maximum Transition Frequency 4(Min) MHz
Type NPN