2N4234 GP BJT
Datasheet: View
Stock
- 10 ADVANCED SEMI
- 22 FAIRCHILD
- 25 MOTOROLA
- 10 NATIONAL SEMICONDUCTOR
- 23967 NEW JERSEY SEMICONDUCTOR
- 10 RFGAIN
- 21 SOLID STATE INC
- 5 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@100mA@1A|0.4@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | NPN |