2N4236 GP BJT
Datasheet: View
Stock
- 5 API
- 1 ELECTRONIC TRANSISTOR
- 32 FAIRCHILD
- 4 INTERNATIONAL DEVICES INC
- 8 MOTOROLA
- 4 NATIONAL SEMICONDUCTOR
- 652 NEW JERSEY SEMICONDUCTOR
- 3 SOLID SATE
- 3 SOLID STATE TRANSISTOR
- 2 SOLITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@100mA@1A|0.4@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | NPN |