2N4237 GP BJT

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Stock

  • 10 IDT
  • 18 MOTOROLA
  • 1 NATIONAL SEMICONDUCTOR
  • 75728 NEW JERSEY SEMICONDUCTOR
  • 1 SEMICOA
  • 3 SNSITRON
  • 6 SOLID SATE
  • 10 SOLITRON
  • 16 WORLD WIDE

Trans GP BJT NPN 40V 1A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage 0.3@50A@500A|0.6@0.1A@1A V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type NPN