2N4239 GP BJT

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  • 22 MOTOROLA
  • 10776 NEW JERSEY SEMICONDUCTOR
  • 59 SOLID STATE INC
  • 10 WORLD WIDE

Trans GP BJT NPN 80V 1A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.3@50A@500A|0.6@0.1A@1A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type NPN