2N424 GP BJT
Datasheet: View
Stock
- 1 ELECTRONIC TRANSISTOR
- 440 NEW JERSEY SEMICONDUCTOR
- 27 RAYTHEON
- 33 SILICON TRANSISTOR CORP
- 228 TEXAS INSTRUMENT
- 24 TRANSITRON
- 1 WALBERN
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Material | Si | |
| Maximum Collector Base Voltage | 30 | V |
| Maximum Collector Emitter Saturation Voltage | 0.22@1mA@10mA|0.35@10mA@100mA | V |
| Maximum Collector Emitter Voltage | 15 | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 350(Min) | MHz |
| Type | NPN |