2N424A GP BJT
Datasheet: View
Stock
- 325 NEW JERSEY SEMICONDUCTOR
- 3 TRANSITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 500 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.075A@0.75A | V |
| Maximum Collector Emitter Voltage | 300 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 35000 | mW |
| Type | NPN |