2N4250A GP BJT

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  • 44 MEH
  • 5 MICROSEMI CONDUCTOR
  • 107 NEW JERSEY SEMICONDUCTOR
  • 212 SOLID STATE INC
  • 2 WORLD WIDE

Trans GP BJT PNP 60V

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.25@0.5mA@10mA V
Maximum Collector Emitter Voltage 60 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 200 mW
Type PNP