2N4256 GP BJT

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  • 6231 NEW JERSEY SEMICONDUCTOR
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Trans GP BJT NPN 30V 0.1A 3-Pin TO-92

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 30 V
Maximum Collector Emitter Saturation Voltage 0.2@2uA@0.1mA 0.2@20uA@1mA
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 625 mW
Maximum Transition Frequency 200(Typ) MHz
Type NPN