2N4258A GP BJT

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  • 85 FAIRCHILD
  • 9 NATIONAL SEMICONDUCTOR
  • 679 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 12V 0.05A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 12 V
Maximum Collector Emitter Saturation Voltage 0.15@1mA@10mA|0.5@5mA@50mA V
Maximum Collector Emitter Voltage 12 V
Maximum DC Collector Current 0.05 A
Maximum Emitter Base Voltage 4.5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 310 mW
Maximum Transition Frequency 700(Min) MHz
Type PNP