2N4261 GP BJT
Datasheet: View
Stock
- 4749 NEW JERSEY SEMICONDUCTOR
- 1 RAYTHEON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Material | Si | |
| Maximum Collector Base Voltage | 15 | V |
| Maximum Collector Emitter Saturation Voltage | 0.15@0.1mA@1mA|0.35@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 15 | V |
| Maximum DC Collector Current | 0.03 | A |
| Maximum Emitter Base Voltage | 4.5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 200 | mW |
| Type | PNP |