2N4296 GP BJT

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  • 956 NEW JERSEY SEMICONDUCTOR
  • 15 RCA
  • 4 SEMICOA

Trans GP BJT NPN 250V 1A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 350(Min) V
Maximum Collector Emitter Saturation Voltage 0.9@0.05A V
Maximum Collector Emitter Voltage 250(Min) V
Maximum DC Collector Current 1 A
Maximum Power Dissipation 20000 mW
Maximum Transition Frequency 20(Min) MHz
Type NPN