2N4298 GP BJT

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  • 29 INTERNATIONAL DEVICES INC
  • 3986 NEW JERSEY SEMICONDUCTOR
  • 99 RCA
  • 17 SILICON TRANSISTOR CORP

Trans GP BJT NPN 350V 1A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 500(Min) V
Maximum Collector Emitter Saturation Voltage 0.9@0.05A V
Maximum Collector Emitter Voltage 350(Min) V
Maximum DC Collector Current 1 A
Maximum Power Dissipation 20000 mW
Maximum Transition Frequency 20(Min) MHz
Type NPN