2N4301 GP BJT

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  • 21 NEW JERSEY SEMICONDUCTOR
  • 15 WORLD WIDE

Trans GP BJT NPN 80V 10A 3-Pin TO-61

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@1.3mA@5mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 87000 mW
Type NPN