2N4346 GP BJT

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  • 158 NEW JERSEY SEMICONDUCTOR
  • 27 RCA

Trans GP BJT NPN 120V 10A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 140 V
Maximum Collector Emitter Saturation Voltage 1@0.2A@2A|2@0.63A@5A V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 100000 mW
Maximum Transition Frequency 200(Min) MHz
Type NPN