2N4348 GP BJT
Datasheet: View
Stock
- 5 FAIRCHILD
- 8 GENERAL ELECTRIC
- 282 HARRIS
- 1 MOTOROLA
- 54 NATIONAL SEMICONDUCTOR
- 5156 NEW JERSEY SEMICONDUCTOR
- 178 RCA
- 26 RF POWER
- 4 SNSITRON
- 11 SOLID STATE TRANSISTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 140 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.2A@2A|2@0.63A@5A | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 100000 | mW |
| Maximum Transition Frequency | 200(Min) | MHz |
| Type | NPN |