2N4356 GP BJT

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  • 55 FAIRCHILD
  • 5436 NEW JERSEY SEMICONDUCTOR
  • 14 WORLD WIDE

Trans GP BJT PNP 80V 1A

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.15@15mA@150mA|0.5@50mA@500mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 350 mW
Maximum Transition Frequency 500 MHz
Type PNP