2N4360 MOSFET

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Trans MOSFET P-CH Si 20V

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Features Values Unit
Category Power MOSFET
Channel Type P
Configuration Single
Material Si
Maximum Drain Source Voltage 20 V
Maximum Gate Source Voltage -20 V
Maximum Operating Temperature 125 ᄀC
Maximum Power Dissipation 200 mW
Minimum Operating Temperature -55 ᄀC
Number of Elements per Chip 1