2N439A GP BJT
Datasheet: View
Stock
- 70 CBS
- 157 GENERAL INSTRUMENT
- 587 NEW JERSEY SEMICONDUCTOR
- 70 RAYTHEON
- 14 SYLVANIA
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.55@0.5A@5A|0.75@1A@10A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 5000 | mW |
| Type | PNP |