2N4400 GP BJT
Datasheet: View
Stock
- 1900 CARSON
- 93 CARTER
- 2653 FAIRCHILD
- 123 GENERAL ELECTRIC
- 34 INTERMETALL
- 10 MICROSEMI CONDUCTOR
- 343 MOTOROLA
- 678539 NATIONAL SEMICONDUCTOR
- 1622 NEW JERSEY SEMICONDUCTOR
- 69 SIEMENS
- 682 SIGNETICS
- 1 SOLID STATE SYSTEMS
- 347 SPRAGUE
- 1875 TOMSON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@15mA@150mA|0.75@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 0.6 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 200(Min) | MHz |
| Type | NPN |