2N4404 GP BJT

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  • 162 MOTOROLA
  • 1697 NEW JERSEY SEMICONDUCTOR
  • 50 RF POWER
  • 5 WORLD WIDE

Trans GP BJT PNP 80V 1A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.15@1mA@10mA 0.2@15mA@150mA
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1250 mW
Maximum Transition Frequency 600 MHz
Type PNP