2N4449 GP BJT

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  • 66 FAIRCHILD
  • 50 MOTOROLA
  • 2 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 15V 3-Pin TO-46

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 0.2@1mA@10mA 0.25@3mA@30mA
Maximum Collector Emitter Voltage 15 V
Maximum Emitter Base Voltage 4.5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 360 mW
Type NPN