2N465 RF BJT
Datasheet: View
Stock
- 30 ELECTRONIC TRANSISTOR
- 21 GENERAL INSTRUMENT
- 158 MOTOROLA
- 1099 NEW JERSEY SEMICONDUCTOR
- 63 RAYTHEON
- 4 SYLVANIA
- 1 WALBERN
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@20mA@100mA | V |
| Maximum Collector Emitter Voltage | 20 | V |
| Maximum DC Collector Current | 0.4 | A |
| Maximum Emitter Base Voltage | 2 | V |
| Minimum DC Current Gain | 10@100mA@5V|5@360mA@5V | |
| Number of Elements per Chip | 1 | |
| Output Power | 1(Min) | W |
| Type | NPN |