2N4863 GP BJT

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  • 2148 NEW JERSEY SEMICONDUCTOR
  • 3 RF POWER
  • 1 SILICON TRANSISTOR CORP
  • 4 WORLD WIDE

Trans GP BJT NPN 120V 2A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.2@0.05mA@0.5mA V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 2 A
Maximum Power Dissipation 7000 mW
Type NPN