2N4878 GP BJT

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  • 328 INTEL
  • 501 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 4A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@0.4mA@4mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 4 A
Maximum Power Dissipation 10000 mW
Type NPN