2N4919 GP BJT
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Stock
- 10 ADVANCED SEMI
- 42067 MOTOROLA
- 496 NATIONAL SEMICONDUCTOR
- 15316 NEW JERSEY SEMICONDUCTOR
- 14 RF POWER
- 100 SILICON GENERAL
- 972 ST MICRO
- 14 WORLD WIDE
Trans GP BJT PNP 60V 3A 3-Pin TO-225 Bulk
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@0.1A@1A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 30000 | mW |
| Maximum Transition Frequency | 3(Min) | MHz |
| Type | PNP |