2N4920 GP BJT
Datasheet: View
Stock
- 566 MOTOROLA
- 145 NATIONAL SEMICONDUCTOR
- 48875 NEW JERSEY SEMICONDUCTOR
- 2 ON SEMI
- 12 SGS
- 20 WORLD WIDE
Trans GP BJT PNP 80V 3A 3-Pin TO-225 Bulk
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@0.1A@1A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 30000 | mW |
| Maximum Transition Frequency | 3(Min) | MHz |
| Type | PNP |