2N4930 GP BJT
Datasheet: View
Stock
- 14 MOTOROLA
- 772 NEW JERSEY SEMICONDUCTOR
- 15 RF POWER
- 34 SNSITRON
- 2 TRANSITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 200 | V |
| Maximum Collector Emitter Saturation Voltage | 1.2@3mA@30mA|1@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 200 | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | PNP |