2N5003 GP BJT

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  • 1 FAIRCHILD
  • 369 NEW JERSEY SEMICONDUCTOR
  • 2 UNITRODE

Trans GP BJT PNP 80V 5A 3-Pin TO-59

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.75@250mA@2.5A|1.5@500mA@5A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 5.5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 2000 mW
Type PNP