2N5011 GP BJT
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- 1 AMELCO
- 2210 NEW JERSEY SEMICONDUCTOR
- 16 SILICON TRANSISTOR CORP
Trans GP BJT NPN 0.2A 3-Pin TO-5
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 600 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@5mA@25mA | V |
| Maximum DC Collector Current | 0.2 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Type | NPN |