2N5012 GP BJT

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  • 731 NEW JERSEY SEMICONDUCTOR
  • 65 SGS
  • 51 SILICON TRANSISTOR CORP

Trans GP BJT NPN 0.2A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 700 V
Maximum Collector Emitter Saturation Voltage 1.6@5mA@25mA V
Maximum DC Collector Current 0.2 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1000 mW
Type NPN