2N5013 GP BJT
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Stock
- 363 NEW JERSEY SEMICONDUCTOR
- 39 SILICON TRANSISTOR CORP
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 800 | V |
| Maximum Collector Emitter Saturation Voltage | 1.6@5mA@20mA | V |
| Maximum Collector Emitter Voltage | 800 | V |
| Maximum DC Collector Current | 0.5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 2000 | mW |
| Maximum Transition Frequency | 20(Min) | MHz |
| Type | NPN |