2N5013 GP BJT

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  • 363 NEW JERSEY SEMICONDUCTOR
  • 39 SILICON TRANSISTOR CORP

Trans GP BJT NPN 800V 0.5A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 800 V
Maximum Collector Emitter Saturation Voltage 1.6@5mA@20mA V
Maximum Collector Emitter Voltage 800 V
Maximum DC Collector Current 0.5 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 2000 mW
Maximum Transition Frequency 20(Min) MHz
Type NPN