2N5038 GP BJT
Datasheet: View
Stock
- 1 GENERAL ELECTRIC
- 154 HARRIS
- 15 MOTOROLA
- 18928 NEW JERSEY SEMICONDUCTOR
- 11 ON SEMI
- 4 POWER PHYSICS CORP
- 133 RCA
- 12 SIEMENS
- 10 SILICON TRANSISTOR CORP
- 1 SOLID SATE
- 54 SOLITRON
- 1 TEXAS INSTRUMENT
- 194 UNITRODE
- 22 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 150 | V |
| Maximum Collector Emitter Saturation Voltage | 1@1.2A@12A|2.5@5A@20A | V |
| Maximum Collector Emitter Voltage | 90 | V |
| Maximum DC Collector Current | 20 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 140000 | mW |
| Type | NPN |