2N5039 GP BJT
Datasheet: View
Stock
- 63 FAIRCHILD
- 6 HARRIS
- 17 MOTOROLA
- 2556 NEW JERSEY SEMICONDUCTOR
- 168 RCA
- 20 SGS
- 12 SILICON TRANSISTOR CORP
- 247 SOLITRON
- 2 UNITED PAGE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 125 | V |
| Maximum Collector Emitter Saturation Voltage | 1@1A@10A | 2.5@5A@20A |
| Maximum Collector Emitter Voltage | 75 | V |
| Maximum DC Collector Current | 20 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 140000 | mW |
| Type | NPN |