2N5051 GP BJT

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  • 1 GENERAL ELECTRIC
  • 3813 NEW JERSEY SEMICONDUCTOR
  • 8 SILICON TRANSISTOR CORP
  • 812 SOLITRON
  • 1 WORLD WIDE

Trans GP BJT NPN 150V 2A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@0.1mA@0.75mA V
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 2 A
Maximum Power Dissipation 40000 mW
Type NPN