2N5052 GP BJT
Datasheet: View
Stock
- 34 HARRIS
- 4 MOTOROLA
- 8603 NEW JERSEY SEMICONDUCTOR
- 97 RF POWER
- 4 SILICON TRANSISTOR CORP
- 1 SOLID SATE
- 1 SOLITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1@0.1mA@0.75mA | V |
| Maximum Collector Emitter Voltage | 200 | V |
| Maximum DC Collector Current | 2 | A |
| Maximum Power Dissipation | 40000 | mW |
| Type | NPN |