2N5058 GP BJT

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  • 53 ADVANCED SEMI
  • 3141 FAIRCHILD
  • 20 INTERNATIONAL DEVICES INC
  • 8682 MOTOROLA
  • 12212 NEW JERSEY SEMICONDUCTOR
  • 23 SILICON TRANSISTOR CORP
  • 10721 SOLID STATE TRANSISTOR
  • 5616 TEXAS INSTRUMENT

Trans GP BJT NPN 300V 0.15A 3-Pin TO-39 Box

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Material Si
Maximum Collector Base Voltage 300 V
Maximum Collector Emitter Saturation Voltage 1@3A@30A V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 0.15 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 1 mW
Maximum Transition Frequency 30(Min) MHz
Type NPN