2N508 RF BJT
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Stock
- 20 GENERAL ELECTRIC
- 3 GENERAL INSTRUMENT
- 5 INTERNATIONAL DEVICES INC
- 48 MOTOROLA
- 1230 NEW JERSEY SEMICONDUCTOR
- 5 SOLITRON
- 2 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 15 | V |
| Maximum Collector Emitter Voltage | 10 | V |
| Maximum DC Collector Current | 0.02 | A |
| Maximum Emitter Base Voltage | 3 | V |
| Maximum Transition Frequency | 2500 | MHz |
| Minimum DC Current Gain | 25@1mA@6V | |
| Number of Elements per Chip | 1 | |
| Type | NPN |