2N5086 GP BJT
Datasheet: View
Stock
- 945 FAIRCHILD
- 476 NATIONAL SEMICONDUCTOR
- 7384 NEW JERSEY SEMICONDUCTOR
- 3 NIPPON SEMI
- 203 NUCLEAR PRODUCTS CORP
- 152 RCA
- 3 RF POWER
- 3 ROHM
- 128 TELEDYNE CRYSTALONICS
- 1727 TEXAS INSTRUMENT
- 6102 TOMSON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Saturation Voltage | 0.3@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 3 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1500 | mW |
| Maximum Transition Frequency | 40(Min) | MHz |
| Type | PNP |