2N5091 GP BJT

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  • 10 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 350V 1A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 3@0.025mA@0.025mA V
Maximum Collector Emitter Voltage 350 V
Maximum DC Collector Current 1 A
Maximum Power Dissipation 4000 mW
Type PNP