2N5096 GP BJT
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- 7 NEW JERSEY SEMICONDUCTOR
- 5 RF POWER
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 3@2.5mA@25mA | V |
| Maximum Collector Emitter Voltage | 500 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Power Dissipation | 4000 | mW |
| Type | PNP |