2N5099 GP BJT

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  • 2 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 800V 1A 3-Pin TO-5

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.5@0.0025mA@0.025mA V
Maximum Collector Emitter Voltage 800 V
Maximum DC Collector Current 1 A
Maximum Power Dissipation 4000 mW
Type NPN