2N5102 RF BJT
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- 8 RF POWER
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@10mA@100mA | V |
| Maximum Collector Emitter Voltage | 20 | V |
| Maximum DC Collector Current | 0.4 | A |
| Maximum Emitter Base Voltage | 3 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 40@50mA@15V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |