2N5109 RF BJT
Datasheet: View
Stock
- 40 MOTOROLA
- 4440 NEW JERSEY SEMICONDUCTOR
- 60 RCA
- 16 SEMICOA
- 9 SGS
- 6 SOLITRON
- 30 ST MICRO
- 47 TOMSON
- 2 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.5@10mA@100mA | V |
| Maximum Collector Emitter Voltage | 20 | V |
| Maximum DC Collector Current | 0.4 | A |
| Maximum Emitter Base Voltage | 3 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 40@50mA@15V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |