2N5112 GP BJT

Features	Values	Unit
Category	Bipolar Power
Configuration	Single
Material	Si
Maximum Collector Base Voltage	80	V
Maximum Collector Emitter Saturation Voltage	0.9@50mA@500mA	2@250mA@1A
Maximum Collector Emitter Voltage	80	V
Maximum DC Collector Current	1	A
Maximum Emitter Base Voltage	10	V
Maximum Operating Temperature	175	ﾡC
Maximum Power Dissipation	34000	mW
Type	PNP